MMBD4448V

MMBD4448V SWITCHING DIODE SOT-563 FEATURES Fast switching speed High conductance MARKING: KAL Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage RMS Reverse Voltage Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Peak forward surge current @=1.0μs @=1.0s Power Dissipation Thermal Ambient Storage temperature Resistance Junction to Symbol VRM VR(RMS) VRRM VRWM VR IFM IO IFSM Pd RθJA TSTG 500 250 4.0 1.5 150 833 -65 to +150 80 Limits 100 57 1 Unit V V V mA mA A mW K/W ℃ Electrical Ratings @TA=25℃ Parameter Reverse Breakdown Voltage Symbol V(BR)R VF1 Forward voltage VF2 VF3 VF4 Reverse current Capacitance between terminals Reverse Recovery Time IR1 IR2 CT trr Min. 80 0.62 0.72 0.855 1.0 1.25 Typ. Max. Unit V V V V V μA nA pF ns Conditions IR=2.5μA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=6V,f=1MHz VR=6V, IF=5mA 0.1 25 3.5 4 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 MMBD4448V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05