MMBT4403

MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -0.6 0.3 150 -55-150 Units V V V A W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Test conditions MIN -40 -40 -5 -0.1 -0.1 -0.1 100 300 -0.4 -0.95 200 V V MHz MAX UNIT V V V μA μA μA IC=-100μA , IE=0 IC= -1mA , IB=0 IE=-100μA, IC=0 VCB=-35V, IE=0 VCE=-35 V, IB=0 VEB=-4V,IC=0 VCE=-2V, IC= -150mA IC=-150mA, IB=-15mA IC=- 150mA, IB=-15mA VCE= -10V, IC= -20mA fT f = 100MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT4403 ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT4403 ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５