MMBT5401

MMBT5401 TRANSISTOR(PNP) SOT-23 FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -160 -150 -5 -0.6 0.3 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 DC current gain hFE2 hFE3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) Test conditions IE=0 IB=0 MIN -160 -150 -5 -0.1 -0.1 80 100 50 -0.5 -1 100 V V MHz 300 MAX UNIT V V V IC= -100μA, IC= -1mA, IE= -10μA, IC=0 VCB=-120 V , IE=0 VEB=-4V , VCE= -5V, VCE= -5V, VCE= -5V, IC=0 IC= -1mA IC=-10mA IC=-50mA μA μA IC=-50 mA, IB= -5mA IC= -50 mA, IB= -5mA VCE= -5V, IC= -10mA fT f=30MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT5401 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５