MMBT589

MMBT58 9 TRANSISTOR(PNP) FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE SOT-23 MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance, junction to Ambient Junction Temperature Storage Temperature Value -50 -30 -5 -1 310 403 150 -55-150 Units V V V A mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE1 DC current gain hFE2 hFE3 hFE4 VCE(sat)1 Collector-emitter saturation voltage VCE(sat)2 VCE(sat)3 Base-emitter saturation voltage Base-emitter Turn-on voltage Transition frequency Collector Output Capacitance VBE(sat) VBE(on) fT Cob Test IC=-100μA,IE=0 IC=-10mA,IB=0 IE=-100μA,IC=0 VCB=-30V,IE=0 VCES=-30V VEB=-4V,IC=0 VCE=-2V,IC=-1mA VCE=-2V,IC=-500mA VCE=-2V,IC=-1A VCE=-2V,IC=-2A IC= -500mA, IB=-50mA IC= -1A, IB=-100mA IC= -2A, IB=-200mA IC= -1A, IB=-100mA VCE=-2V, IC=-1A VCE=-5V, IC=-100mA , f =100MHz f=1MHz 100 15 100 100 80 40 -0.25 -0.3 -0.65 -1.2 -1.1 V V V V V MHz pF 300 conditions MIN -50 -30 -5 -0.1 -0.1 -0.1 TYP MAX UNIT V V V μA μA μA １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT58 9 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５