MMBTA06

MMBTA06 TRANSISTOR(NPN) SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 4 500 300 416 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Test IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=80V, IE=0 VCE=60V, IB=0 VEB=3V, IC=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=2V,IC=10mA, f=100MHz 100 100 100 0.25 1.2 V V MHz conditions Min 80 80 4 0.1 0.1 0.1 400 Typ Max Unit V V V µA µA µA IC=0.1mA, IE=0 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５