MMBTA42

MMBTA42 TRANSISTOR(NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RӨJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Thermal Resistance, junction to Ambient Junction Temperature Storage Temperature SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Value 300 300 5 0.3 0.35 357 150 -55to +150 Units V V V A W ℃/mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) Test conditions IE=0 MIN 300 300 5 0.25 0.1 60 100 60 0.2 0.9 50 V V MHz 200 MAX UNIT V V V μA μA IC= 100μA, IC= 1mA, IB=0 IE= 100μA, IC=0 VCB=200V, IE=0 VEB= 5V, IC=0 VCE= 10V, IC= 1mA VCE= 10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB= 2mA IC= 20mA, IB=2mA VCE= 20V, IC= 10mA, fT f=30MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA42 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBTA42 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５