MMBTA43

MMBTA43 TRANSISTOR(NPN) SOT–23 FEATURES  High Voltage Application  Telephone Application  Complementary to MMBTA93 MARKING:ABX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 200 5 500 350 357 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE(1)* DC current gain hFE(2)* hFE(3)* Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat)* VBE(sat)* fT Cob Test conditions Min 200 200 5 40 40 40 0.5 0.9 50 4 V V MHz pF Typ Max Unit V V V IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=10V, IC=10mA VCE=10V, IC=1mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=20V,IE=10mA, f=100MHz VCB=20V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５