MMBTA44

MMBTA44 TRANSISTOR(NP) SOT–23 FEATURES  High Collector-Emitter Voltage  Complement to MMBTA94 MARKING: 3D 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 500 400 6 100 350 357 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * hFE(3) * hFE(4) * VCE(sat)1* Collector-emitter saturation voltage VCE(sat)2* VCE(sat)3* Base-emitter saturation voltage Collector output capacitance Emitter input capacitance *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. VBE(sat)* Cob Cib Test conditions Min 500 400 6 0.1 0.1 40 50 45 40 0.4 0.5 0.75 0.75 7 130 V V V V pF pF 200 Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=400V, IE=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCB=20V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５