MMBTA56

MMBTA56 TRANSISTOR(PNP) FEATURES  General Purpose Amplifier Applications MARKING: 2GM SOT–23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -80 -80 -4 -500 225 555 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Test IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-80V, IE=0 VCE=-60V, IB=0 VEB=-4V, IC=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V,IC=-100mA, f=100MHz 50 100 100 -0.25 -1.2 V V MHz conditions Min -80 -80 -4 -0.1 -0.1 -0.1 400 Typ Max Unit V V V µA µA µA IC=-100µA, IE=0 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５