MMBTA64

MMBTA64 TRANSISTOR(PNP) SOT–23 FEATURES  For Applications Requiring High Current Gain MARKING:2V MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 -30 -10 -800 300 416 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain hFE(2) * Collector-emitter saturation voltage Base-emitter voltage Transition frequency *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. VCE(sat) * VBE* fT VCE=-5V, IC=-100mA IC=-100mA, IB=-0.1mA VCE=-5V, IC=-100mA VCE=-5V,IC=-10mA, f=100MHz 125 20 -1.5 -2 K V V MHz Symbol V(BR)CBO V(BR)EBO ICBO IEBO hFE(1) * Test conditions Min -30 -10 -0.1 -0.1 10 Typ Max Unit V V µA µA K IC=-100µA, IE=0 IE=-100µA, IC=0 VCB=-30V, IE=0 VEB=-10V, IC=0 VCE=-5V, IC=-10mA １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５