MMBTA93

MMBTA93 TRANSISTOR(PNP) SOT–23 FEATURES  High Voltage Application  Telephone Application  Complementary to MMBTA43 MARKING:YW 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -200 -200 -5 -500 350 357 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1)* DC current gain hFE(2*) hFE(3)* Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. VCE(sat)* VBE(sat)* fT Cob Test conditions Min -200 -200 -5 -0.25 -0.25 -0.1 40 25 25 -0.5 -0.9 50 8 V V MHz pF Typ Max Unit V V V µA µA µA IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-200V, IE=0 VCE=-200V, IB=0 VEB=-5V, IC=0 VCE=-10V, IC=-10mA VCE=-10V, IC=-1mA VCE=-10V, IC=-30mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-20V,IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５