MMBTA94

MMBTA94 TRANSISTOR(PNP) SOT–23 FEATURES  High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -400 -400 -5 -100 350 357 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) hFE(3) hFE(4) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat)1 VCE(sat)2 VBE(sat) fT Test conditions Min -400 -400 -5 -0.1 -5 -0.1 80 70 40 40 -0.2 -0.3 -0.75 50 V V V MHz 300 Typ Max Unit V V V µA µA µA IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-400V, IE=0 VCE=-400V, IB=0 VEB=-4V, IC=0 VCE=-10V, IC=-10mA VCE=-10V, IC=-1mA VCE=-10V, IC=-100mA VCE=-10V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA VCE=-20V,IC=-10mA, f=30MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５