MMBTH10

MMBTH1 0 TRANSISTOR(NPN) SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 3 50 225 556 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions Min 30 25 3 0.1 0.1 60 0.5 0.95 650 0.7 V V MHz pF Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE=10V,IC=4mA f=100MHz VCB=10V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５