MMST3904

MMST3904 TRANSISTOR(NPN) FEATURES  Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 40 5 200 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO* V(BR)CEO* V(BR)EBO* ICBO* ICEO* Test IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=40V, IB=0 VCE=1V, IC=100µA DC current gain hFE* VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA Collector-emitter saturation voltage VCE(sat)* IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V,IC=10mA , f=100MHz VCB=5V, IE=0, f=1MHz VEB=0.5V, IE=0, f=1MHz VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1= IB2=1mA 300 4 8 35 35 225 75 40 70 100 60 0.25 0.3 0.85 0.95 V V V V MHz pF pF ns ns ns ns 300 conditions Min 60 40 5 60 500 Typ Max Unit V V V nA nA Base-emitter saturation voltage Transition frequency Collector output capacitance Collector output capacitance Delay time Rise time Storage time Fall time VBE(sat)* fT Cob Cib td tr ts tf *Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５