MMST3906

MMST3906 TRANSISTOR(PNP) FEATURES  Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -40 -40 -5 -200 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Base cut-off current Collector cut-off current Symbol V(BR)CBO* V(BR)CEO* V(BR)EBO* IBL* ICEX* Test IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-30V, VEB(Off)=-3V VCE=-30V, VEB(Off)=-3V VCE=-1V, IC=-100µA DC current gain hFE* VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA Collector-emitter saturation voltage VCE(sat)* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-20V,IC=-10mA , f=100MHz VCB=-5V, IE=0, f=1MHz VEB=-0.5V, IE=0, f=1MHz VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA VCC=3V, IC=-10mA, IB1= IB2=-1mA 250 4.5 10 35 35 225 75 -0.65 60 80 100 300 -0.2 -0.3 -0.85 -0.95 V V V V MHz pF pF ns ns ns ns conditions Min -40 -40 -5 -50 -50 Typ Max Unit V V V nA nA Base-emitter saturation voltage Transition frequency Collector output capacitance Collector output capacitance Delay time Rise time Storage time Fall time VBE(sat)* fT Cob Cib td tr ts tf *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５