MMST4401

MMST4401 TRANSISTOR(NPN) FEATURES  Complementary to MMST4403  Small Surface Mount Package MARKING: K3X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 40 6 600 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO Test IC=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VCE=35V, IB=0 VCE=1V, IC=100µA VCE=1V, IC=1mA DC current gain hFE VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V,IC=20mA , f=100MHz VCB=5V, IE=0, f=1MHz 250 6.5 0.75 20 40 80 100 40 0.4 0.75 0.95 1.2 V V V V MHz pF 300 conditions Min 60 40 6 100 500 Typ Max Unit V V V nA nA IC=100µA, IE=0 Base-emitter saturation voltage Transition frequency Collector output capacitance VBE(sat) fT Cob １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５