MMST4403

MMST4403 TRANSISTOR(PNP) FEATURES  Complementary To MMST4401  Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -40 -40 -5 -600 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO Test IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-35V, IE=0 VCE=-35V, IB=0 VCE=-1V, IC=-100µA VCE=-1V, IC=-1mA DC current gain hFE VCE=-1V, IC=-10mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-10V,IC=-20mA , f=100MHz VCB=-10V, IE=0, f=1MHz 200 8.5 -0.75 30 60 100 100 20 -0.4 -0.75 -0.95 -1.3 V V V V MHz pF 300 conditions Min -40 -40 -5 -100 -500 Typ Max Unit V V V nA nA IC=-100µA, IE=0 Base-emitter saturation voltage Transition frequency Collector output capacitance VBE(sat) fT Cob １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５