MMST5401

MMST5401 TRANSISTOR(PNP) FEATURES  Complementary to MMST5551  Small Surface Mount Package  Ideal for Medium Power Amplificationand Switching MARKING:K4M 1. BASE SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -160 -150 -5 -600 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 VCE=-5V, IC=-1mA DC current gain hFE VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA VCE=-10V,IC=-10mA , f=100MHz VCB=-10V, IE=0, f=1MHz 100 6 50 60 50 -0.5 -0.2 -1 -1 V V V V MHz pF 300 conditions Min -160 -150 -5 -50 -50 Typ Max Unit V V V nA nA IC=-100µA, IE=0 Base-emitter saturation voltage Transition frequency Collector output capacitance VBE(sat) fT Cob １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５