MMST5551

MMST5551 TRANSISTOR(NPN) FEATURES  Complementary to MMST5401  Small Surface Mount Package  Ideal for Medium Power Amplification and Switching MARKING:K4N 1. BASE SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 180 160 6 600 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO Test IC=1mA, IB=0 IE=10µA, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA DC current gain hFE VCE=5V, IC=10mA VCE=5V, IC=50mA Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V,IC=10mA , f=100MHz VCB=10V, IE=0, f=1MHz 100 80 80 30 0.2 0.15 1 1 300 6 V V V V MHz pF 300 conditions Min 180 160 6 50 50 Typ Max Unit V V V nA nA IC=100µA, IE=0 Base-emitter saturation voltage Transition frequency Collector output capacitance VBE(sat) fT Cob *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５