PXT2222A

PXT2222A TRANSISTOR (NPN) SOT-89 FEATURES Epitaxial planar die construction Complementary PNP Type available(PXT2907A) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current 1. BASE 2. COLLECTOR 3. EMITTER Units V V V mA W ℃ ℃ conditions MIN 75 40 6 0. 01 0. 01 35 50 75 100 50 40 1 0.3 2.0 0.6 300 8 10 25 225 60 1.2 V V V V MHz pF nS nS nS nS 300 MAX UNIT V V V μA μA 1 2 3 Value 75 40 6 600 0.5 150 -55 +150 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) hFE(6) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob td tr tS tf ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Test IC= 10μ A,IE=0 IC= 10mA, IB=0 IE=10μA, IC=0 VCB=60V, IE=0 VEB= 5V , IC=0 VCE=10V, IC= 0.1mA VCE=10V, IC= 1mA VCE=10V, IC= 10mA VCE=10V, IC= 150mA VCE=1V, IC= 150mA VCE=10V, IC= 500mA IC=500mA, IB= 50mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=10V, IC=20mA f=100MHz VCB=10V, IE= 0,f=1MHz VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA VCC=30V, IC=150mA IB1=- IB2= 15mA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Delay time Rise time Storage time Fall time １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PXT2222A Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５