PXT3906

PXT3906 TRANSISTOR(PNP) FEATURES Compliment to PXT3904 Low current Low voltage MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -6 -0.2 0.5 150 -55-150 Units V V V A W ℃ ℃ 3. EMITTER SOT-89 1. BASE 2. COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cc Ce NF td tr tS tf IC=-10mA , IB1=-IB2= -1mA Test IC=-10μA,IE=0 IC=-1mA,IB=0 IE=-10μA,IC=0 VCB=-30V,IE=0 VEB=-6V,IC=0 VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA IC=-10mA,IB=-1mA IC=-50mA,IB=-5mA VCE=-20V,IC=-10mA,f=100MHz VCB=-5V,IE=0,f=1MHz VEB=-0.5V,IC=0,f=1MHz VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz, RS=1KΩ 250 4.5 10 4 35 35 225 75 -0.65 60 80 100 60 30 -0.25 -0.4 -0.85 -0.95 V V V V MHz pF pF dB nS nS nS nS 300 conditions MIN -40 -40 -6 -0.05 -0.05 TYP MAX UNIT V V V μA μA Base-emitter saturation voltage Transition frequency Collector capacitance Emitter capacitance Noise figure Delay time Rise time Storage time Fall time １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PXT3906 Typical characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５