RB717F

RB717F SCHOTTKY BARRIER DIODE FEATURES: Low VF, Low VR High reliability MARKING: 3E· SOT-323 Maximum Ratings @TA=25 ℃ Parameter Peak reverse voltage DC reverse voltage Peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IFSM IO PD Tj Tstg Limits 40 40 200 30 200 125 -40-125 Unit V V mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse voltage leakage current Forward voltage Capacitance between terminals Symbol IR VF CT Test unless conditions VR=10V IF=1mA otherwise MIN specified) TYP MAX 1 0.37 2.0 UNIT μA V pF VR=1V, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ RB717F Typical characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５