SI2312

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA = 25oC Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) TA = 75 C TJ, Tstg RθJA o Symbol Limit Unit VDS VGS ID IDM PD 20 +8 4.9 15 0.75 0.48 -55 to 150 140 o V A W o C C/W １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SI2312 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Symbol Test Cond ition Min. Typ. Miax. Unit BVDSS RDS(on) RDS(on) RDS(on) VGS(th) IDSS IGSS gfs VGS = 0V, ID = 250uA VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.5A VGS = 1.8V, ID = 4.0A VDS =VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = ± 8V, VDS = 0V VDS = 15V, ID = 5.0A 20 21.0 24.0 50.0 0.4 31.0 37.0 85.0 1 1 ± 100 40 V mΩ V uA nA S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 10V, ID = 5.0A VGS = 4.5V VDD = 10V, RL=10Ω ID = 1A, VGEN = 4.5V RG = 6Ω 11.2 1.4 2.2 15 40 48 31 500 300 140 14 nC 25 60 70 45 ns VDS = 8V, VGS = 0V f = 1.0 MHz pF IS VSD IS = 1.8A, VGS = 0V 1.7 1.2 A V Note: Pulse test: pulse width