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STZ8110

STZ8110

  • 厂商:

    HTSEMI(金誉)

  • 封装:

  • 描述:

    STZ8110 - Silicon Planar Zener Diodes - Shenzhen Jin Yu Semiconductor Co., Ltd.

  • 数据手册
  • 价格&库存
STZ8110 数据手册
STZ8000 Series Silicon Planar Zener Diodes For stabilization of power supply application PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Repetitive Peak Forward Current Junction Temperature Storage Temperature Range Symbol Ptot IFRM Tj Tstg Value 300 200 150 - 55 to + 150 Unit mW mA O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RthA VF Value 417 1 Unit O C/W V 1  JinYu semiconductor www.htsemi.com Date:2011/05 STZ8000 Series Zener Voltage Range Type Marking Code 1C 1D 1C1 7D 1E 1F1 7E 1F 1J1 7F 1H 1M1 7H 1J 1Q1 7J 1K 1T1 7K 1W1 1M 1Y1 EB 2A1 1N 2C1 EC 2E1 1P 2G1 ED 2J1 1R 2L1 7R 2N1 1X 2Q1 7X 2S1 1Y 2U1 7Y 2X1 5 5 5 5 5 5 5 5 5 5 5 5 lZT mA STZ8024 STZ8027 STZ8027A STZ8027B STZ8030 STZ8030A STZ8030B STZ8033 STZ8033A STZ8033B STZ8036 STZ8036A STZ8036B STZ8039 STZ8039A STZ8039B STZ8043 STZ8043A STZ8043B STZ8043C STZ8047 STZ8047A STZ8047B STZ8047C STZ8051 STZ8051A STZ8051B STZ8051C STZ8056 STZ8056A STZ8056B STZ8056C STZ8062 STZ8062A STZ8062B STZ8062C STZ8068 STZ8068A STZ8068B STZ8068C STZ8075 STZ8075A STZ8075B STZ8075C 5 for VZ V 2.28…2.6 2.5…2.9 2.5…2.75 2.65…2.9 2.8…3.2 2.8…3.05 2.95…3.2 3.1…3.5 3.1…3.35 3.25…3.5 3.4…3.8 3.4…3.65 3.55…3.8 3.7…4.1 3.7…3.97 3.87…4.1 4…4.6 4.03…4.26 4.17…4.4 4.31…4.54 4.4…5 4.45…4.69 4.59…4.83 4.74…4.99 4.8…5.4 4.87…5.12 5…5.26 5.14…5.4 5.3…6 5.3…5.58 5.48…5.76 5.66…5.95 5.8…6.6 5.85…6.15 6.05…6.36 6.24…6.56 6.4…7.2 6.44…6.77 6.64…6.98 6.85…7.2 7…7.9 7.07…7.43 7.29…7.67 7.51…7.89 20 60 0.5 0.5 4 4 20 60 0.5 0.5 3.5 3 30 100 0.5 1 3 2.3 40 200 0.5 1 2.5 1.2 60 500 1 2 1.5 -0.8 80 800 1 2 1 -1.4 130 10 1 -2.5 130 10 1 -2.5 130 10 1 -2.4 130 20 1 -2.4 120 50 1 -2.1 110 120 1 -2 1) Dynamic Impedance ZZT Ω (Max.) 100 ZZK Ω (Max.) at IZK mA - Reverse Leakage Current IR μA (Max.) 120 at V R V 1 Temp. coefficient of Zener Voltage SZ (mV/OC) Typ. at IZT -1.6 2 JinYu semiconductor www.htsemi.com Date:2011/05 STZ8000 Series Zener Voltage Range Type Marking Code 1Z 2Z1 EJ 3B1 2A 3D1 EK 3F1 2B 3H1 8B 3K1 2C 3M1 EN 3P1 2D 3R1 8D 3T1 2E 3W1 ER 3Y1 3Z1 2F 4B1 EX 4D1 2H 4F1 8H 4H1 2J 4K1 8J 4M1 2K 4P1 8K 4R1 2M 4T1 8M 4W1 5 5 5 5 5 5 5 5 5 5 5 5 lZT mA STZ8082 STZ8082A STZ8082B STZ8082C STZ8091 STZ8091A STZ8091B STZ8091C STZ8100 STZ8100A STZ8100B STZ8100C STZ8110 STZ8110A STZ8110B STZ8110C STZ8120 STZ8120A STZ8120B STZ8120C STZ8130 STZ8130A STZ8130B STZ8130C STZ8140 STZ8150 STZ8150A STZ8150B STZ8150C STZ8160 STZ8160A STZ8160B STZ8160C STZ8180 STZ8180A STZ8180B STZ8180C STZ8200 STZ8200A STZ8200B STZ8200C STZ8220 STZ8220A STZ8220B STZ8220C for VZ V 7.7…8.7 7.77…8.17 8.03…8.43 8.29…8.7 8.5…9.6 8.58…9.02 8.87…9.33 9.14…9.6 9.4…10.6 9.44…9.92 9.75…10.25 10.07…10.59 10.4…11.6 10.4…10.94 10.73…11.28 11.05…11.6 11.4…12.7 11.4…11.96 11.73…12.33 12.06…12.68 12.4…14.1 12.4…12.99 12.73…13.4 13.25…14.08 13.65…14.35 13.9…15.6 13.9…14.76 14.6…15.35 14.95…15.6 15.3…17.1 15.3…16.09 15.7…16.5 16.26…17.1 16.9…19.1 16.9…17.76 17.55…18.45 18.2…19.1 18.8…21.2 18.85…19.81 19.5…20.5 20.15…21.19 20.8…23.3 20.8…21.86 21.45…22.55 22.1…23.24 80 100 0.5 0.1 17 18.4 80 100 0.5 0.1 15 16.4 60 80 0.5 0.1 13 14.4 50 80 0.5 0.1 12 12.4 40 80 0.5 0.1 11 11.4 40 80 0.5 0.1 10 10 35 80 0.5 0.1 10 9.4 30 80 0.5 0.1 9 8.4 30 60 0.5 0.1 8 7.4 30 60 0.5 0.1 7 6.4 20 60 0.5 0.5 6 5.5 20 60 0.5 0.5 5 4.6 1) Dynamic Impedance ZZT Ω (Max.) ZZK Ω (Max.) at IZK mA Reverse Leakage Current IR μA (Max.) at V R V Temp. coefficient of Zener Voltage SZ (mV/OC) Typ. at IZT 3 JinYu semiconductor www.htsemi.com Date:2011/05 STZ8000 Series Zener Voltage Range Type Marking Code 2N 4Y1 FC 5A1 2P 5C1 FD 5E1 2R 5G1 FE 5J1 2X 5L1 8X 5N1 2Y 5Q1 8Y 5S1 2Z 5U1 FJ 5X1 2 2 2 2 2 5 lZT mA STZ8240 STZ8240A STZ8240B STZ8240C STZ8270 STZ8270A STZ8270B STZ8270C STZ8300 STZ8300A STZ8300B STZ8300C STZ8330 STZ8330A STZ8330B STZ8330C STZ8360 STZ8360A STZ8360B STZ8360C STZ8390 STZ8390A STZ8390B STZ8390C 1) 1) Dynamic Impedance ZZT Ω (Max.) ZZK Ω (Max.) at IZK mA Reverse Leakage Current IR μA (Max.) at V R V Temp. coefficient of Zener Voltage SZ (mV/OC) Typ. at IZT for VZ V 22.8…25.6 22.8…23.97 23.5…24.7 24.35…25.6 25.1…28.9 25.3…26.7 26.3…27.7 27.3…28.7 28…32 28.3…29.7 29.3…30.8 30.2…31.8 31…35 31.2…32.8 32.2…33.8 33.2…34.9 34…38 34.1…35.9 35.1…36.9 36.1…37.9 37…41 37.1…39 38…40 39…41 100 120 0.5 0.1 19 20.4 120 120 0.5 0.1 21 23.4 160 160 0.5 0.1 23 26.6 200 200 0.5 0.1 25 29.7 250 250 0.5 0.1 27 33 300 300 0.5 2 30 35.6 VZ is tested with pulses (20 ms). 300 Power Dissipation: Ptot (mW) 200 100 0 0 25 100 Ambient Temperature: Ta ( C) O 150 Derating Curve 4 JinYu semiconductor www.htsemi.com Date:2011/05 STZ8000 Series PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 5 JinYu semiconductor www.htsemi.com Date:2011/05
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