UMD6N

UMD6N DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. External circuit 1 MARKING:D6 Absolute maximum ratings(Ta=25℃) Parameter Collector-base Emitter-base voltage voltage Collector-emitter voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC Tj Tstg Limits 50 50 5 100 150 150 -55~150 Unit V V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT 100 3.29 4.7 250 Min. 50 50 5 0.5 0.5 0.3 600 6.11 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Typ Max. Unit V V V μA μA V IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=5mA,IB=0.25mA VCE=5V,IC=1mA Conditions 1 JinYu semiconductor www.htsemi.com Date:2011/ 05