UMF21N

UMF21N Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA2018 and DTC114E are housed independently in a package. Power switching circuit in a single package. Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) SOT-363 1 Equivalent Circuit (3) (2) (1) MARKING:F21 DTr2 R2 (4) R1 Tr1 F21 (5) (6) TR1 MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -15 -12 -6 -0.5 Units V V V A 0.15 150 -55-150 W ℃ ℃ DTR2 Absolute maximum ratings(Ta=25℃) Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 50 100 150 150 -55~150 Unit V V mA mW ℃ ℃ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 EMF23 TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions Min -15 -12 -6 -0.1 -0.1 270 680 -0.25 260 6.5 V MHz pF Typ Max Unit V V V IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB= -15 V, IE=0 VEB=- 6V, IC=0 VCE=-2V, IC=-10mA IC=-200mA,IB=-10mA VCE=-2V,IC=-10mA, f=100MHz VCB=-10V,IE=0,f=1MHz μA μA fT Cob DTR2 Electrical characteristics (Ta=25℃) Symbol Parameter Min. Typ Max. 0.5 Unit V V mA μA Conditions VCC=5V ,IO=100μA VO=0.3V ,IO=10 mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V ,IO=5mA VI(off) Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 30 7 0.8 10 1 250 3 0.3 0.88 0.5 13 1.2 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05