UML2N

UML2N Isolated transistor and diodes Features The 2SC2412K and a diodes are housed independently In a package MARKING：L2 SOT-353 1 TR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 6 150 150 150 -55 to150 Units V V V mA mW ℃ ℃ DIO Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter DC reverse voltage Peak Reverse Voltage Forward Continuous Current Average Rectified Output Current Surge current Junction temperature Storage temperature Symbol VR VRM IFM IO ISURGE Tj TSTG Limits 80 80 300 100 4 150 -55~+150 Unit V V mA mA A ℃ ℃ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 UML2N TR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min 60 50 6 0.1 0.1 120 560 0.4 180 3.5 V MHz pF Typ Max Unit V V V μA μA IC=50μA,IE=0 IC=1mA,IB=0 IE=50μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=1mA IC=50mA,IB=5mA VCE=12V,IC=2mA,f=100MHz VCB=12V,IE=0,f=1MHz DIO Electrical Ratings @Ta=25℃ Parameter Forward voltage Reverse current Capacitance between terminals Reverse Recovery Time Symbol VF IR CT trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V μA pF ns Conditions IF=100mA VR=70V VR=6V,f=1MHz VR=6V, IF=5mA,RL=50Ω 2 JinYu semiconductor www.htsemi.com Date:2011/ 05