UML6N

UML6N General purpose transistors (Isolated transistor and diode) FEATURES 2SC5585 and RB521S-30 chips in a package APPLICATIONS DC / DC converter Motor driver SOT-353 FEATURES 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 1 STRUCTURE Silicon epitaxial planar transistor Schottky barrier diode Marking: L6 Equivalent circuit Absolute maximum ratings (Ta=25℃) DI Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -55~+150 Unit V mA A ℃ ℃ TR Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction temperature Storage Temperature Limits 15 12 6 500 150 150 -55~+150 Unit V V V mA mW ℃ ℃ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 UML6N ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) DI Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.5 30 Unit V μA Conditions IF=200mA VR=10V TR Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min 15 12 6 0.1 0.1 270 680 0.25 320 7.5 V MHz pF Typ Max Unit V V V uA uA IC=10μA,IE=0 IC=1mA,IB=0 IE=10μA,IC=0 VCB=15V,IE=0 VEB=6V,IC=0 VCE=2V,IC=10mA IC=200mA,IB=10mA VCE=2V,IE=-10mA, f=100MHz VCB=10V,IE=0mA, f=1MHz 2 JinYu semiconductor www.htsemi.com Date:2011/ 05