H1020S

P NP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1020S █ APPLICATIONS power amplifier Applications, power Switching Applications. █ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V V EBO —— Emitter-Base Voltage ……………………………… -5V I C —— Collector Current …………………………………… -2A TO-92 1―Emitter，E 2―Collector， C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT Cob tON tSTG tF -50 -50 -5 -1.0 -1.0 70 40 240 -0.5 -1.2 100 40 0.1 1.0 0.1 V V V μA μA IC=-100μA, IC=-10mA, IE=0 IB=0 IE=-100μA，IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product V V MHz pF μS μS μS IC=-1A, IB=-50mA IC=-1A, IB=-50mA VCE=-2V, IC=-0.5A VCB=-10V, IE=0，f=1MHz See specified test circuit Output Capacitance Turn-on Time Storage Fall Time Time █ hFE Classification O Y 120—240 70—140 P NP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1020S P NP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1020S