N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5342
█ APPLICATIONS
Medium power amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg —— Storage Temperature ………………………… - 55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………32V V EB O —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current………………………………………500mA 1―Emitter,E 2―Collector, C 3―Base,B TO-92
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Min Typ Max Unit Test Conditions
BVCBO BVCEO BVEBO ICBO IEBO HFE fT Cob
40 32 5 0.1 0.1 70 300 7.0 240 0.25
V V V μA μA V MHz pF
IC=100μA,IE=0 IC=1mA,IB=0 IE=10μA,IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=6V, IE=-20mA VCB=6V,IE=0,f=1MHz
VCE(sat) Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product Output Capacacitance
█ hFE Classification
O 70—140 Y 120—240
Shantou Huashan Electronic Devices Co.,Ltd.
H5342
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