H5551

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 █ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— St orage Te mp era t ure ……… …………… …… - 55~150 ℃ T j —— Junction Te mp erature ……………………… ………… 150 ℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………180V VCEO——Collector-Emitter Voltage……………………………160V V EB O —— Em i tte r - B a se Vo lt age … ……… …… ……… …… … 6V IC——Collector Current………………………………………600mA TO-92 1―Emitter，E 2―Base，B 3―Collector， C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO HFE（1） HFE（2） HFE（3） VCE(sat1) VCE(sat2) VBE(sat1) VBE(sat2) 180 160 6 50 50 80 80 30 280 0.15 0.2 1 1 V V V nA nA IC=100μA, IE=0 IC=1mA, IB=0 IE=10μA，IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V V MHz IC=10mA, IB=-1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA, VCE=10V, IC=10mA F=100MHz fT Current Gain-Bandwidth Product 100 300