H5610

PNP S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5610 █ APPLICATIONS AUDIO AMPLIFICATION █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………750mW VCBO——Collector-Base Voltage………………………………-25V VCEO——Collector-Emitter Voltage……………………………-20V V EBO —— Emitter-Base Voltage ……………………………… -5V I C —— Collector Current …………………………………… -1A TO-92 1―Emitter，E 2―Collector， C 3― Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO HFE VCE(sat) VBE(ON) fT Cob -25 -20 -5 -1 60 -0.2 -0.8 360 38 240 -0.5 1 V V V μA V V MHz pF IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA，IC=0 VCB=-20V, IE=0 VCE=-2V, IC=-500mA IC=-800mA, IB=-80mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0， f=1MHz DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Output Capacitance █ hFE Classification A 60—120 B 85—170 C 120—240