H8050

Shantou Huashan Electronic Devices Co.,Ltd. H8050 █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 1W VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………25V V EB O —— Emitter-Base Voltage ……………………………… 6V I C —— Collector Current ……………………………………… 1.5A 1―Emitter，E 2―Base，B 3―Collector， C TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base- Emitter Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product Min Typ Max Unit Test Conditions ICBO IEBO HFE VBE VBE(sat) BVCBO BVCEO BVEBO Cob fT 0.1 0.1 85 40 1 0.5 1.2 40 25 6 9.0 100 500 μA μA VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA V V V V V V pF MHz VCE=1V, IC=10mA IC=800mA, IB=80mA IC=800mA,IB=80mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 VCB=10V,IE=0，f=1MHz VCE=10V, IC=50mA VCE(sat） Collector- Emitter Saturation Voltage █ hFE Classification B C 120—200 D 160—300 E 270—500 85—160 Shantou Huashan Electronic Devices Co.,Ltd. H8050