H8550

Shantou Huashan Electronic Devices Co.,Ltd. H8550 █ PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ P C —— Collector Dissipation ………………………………… 1W VCBO——Collector-Base Voltage………………………………-40V VCEO——Collector-Emitter Voltage……………………………-25V V EBO —— Emitter-Base Voltage ……………………………… -6V I C —— Collector Current ……………………………………… -1.5A 1―Emitter，E 2―Base，B 3―Collector， C TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE（2） VBE VBE(sat) BVCBO BVCEO BVEBO Cob -0.1 -0.1 85 40 500 -1 -0.5 -1.2 -40 -25 -6 15 100 μA μA VCB=-35V, IE=0 VEB=-6V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA HFE（1） DC Current Gain Base- Emitter Voltage Base- Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Output Capacacitance Current Gain-Bandwidth Product V V V V V V pF VCE=-1V, IC=-10mA IC=-800mA, IB=-80mA IC=-800mA,IB=-80mA IC=-100μA，IE=0 IC=-2mA，IB=0 IE=-100μA，IC=0 VCB=-10V,IE=0， f=1MHz VCE(sat） Collector- Emitter Saturation Voltage fT MHz VCE=-10V, IC=-50mA █ hFE Classification B 85—160 C 120—200 D 160—300 E 270—500 Shantou Huashan Electronic Devices Co.,Ltd. H8550