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H8550S

H8550S

  • 厂商:

    HUASHAN

  • 封装:

  • 描述:

    H8550S - PNP SILICON TRANSISTOR - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

  • 数据手册
  • 价格&库存
H8550S 数据手册
PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S █ APPLICATIONS Audio Frequency Amplifier. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) T stg —— Storage Temperature ………………………… - 55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 625W VCBO——Collector-Base Voltage………………………………-40V VCEO——Collector-Emitter Voltage……………………………-20V V EBO —— Emitter-Base Voltage ……………………………… -5V IC——Collector Current………………………………………-500mA 1―Emitter,E 2―Base,B 3―Collector, C TO-92 █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE(2) -0.1 -0.1 85 40 -0.6 -0.6 -40 -20 -5 -1.2 -0.73 500 μA μA VCB=-25V, IE=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA HFE(1) DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) VBE(on) BVCBO BVCEO BVEBO Base- Emitter Saturation Voltage V V V V V V IC=-500mA, IB=-50mA IC=-500mA,IB=-50mA VCE=-1V, IC=-10mA IC=-100μA,IE=0 IC=-2mA,IB=0 IE=100μA,IC=0 Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification B 85—160 C 120—200 D 160—300 E 270—500 PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S
H8550S 价格&库存

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