H933

PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H933 █ APPLICATIONS General Purpose application.. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………400mW VCBO——Collector-Base Voltage………………………………-60V VCEO——Collector-Emitter Voltage……………………………-50V V EBO —— Emitter-Base Voltage ……………………………… -6V I C ——Collector Current…………………………………… -150mA TO-92 1―Emitter，E 2―Collector， C 3―Base，B █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO HFE VCE(sat) ICBO IEBO fT Cob -60 -50 -6 120 560 -0.5 -100 -100 140 4.0 5.0 V V V V nA nA MHz pF IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA，IC=0 VCE=-6V, IC=-1mA IC=-50mA, IB=-5mA VCB=-60V, IE=0 VEB=-6V, IC=0 VCE=-12V,IC=-2mA，f=30MHz VCB=-12V, IE=0，f=1MHz DC Current Gain Collector- Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current Current Gain-Bandwidth Product Output Capacitance █ hFE Classification Q 120—270 R 180—390 K 270—560 Shantou Huashan Electronic Devices Co.,Ltd. H933 Shantou Huashan Electronic Devices Co.,Ltd. H933