PNP S I L I C O N T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H984
█ APPLICATIONS
Low frequency power amplifier Applications.
█ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………600mW VCBO——Collector-Base Voltage………………………………-60V VCEO——Collector-Emitter Voltage……………………………-50V V EBO —— Emitter-Base Voltage ……………………………… -5V IC——Collector Current………………………………………-500mA ( ………………………………-800mA ICP——Collector Current Pulse)
TO-92
1―Emitter,E 2―Collector, C 3―Base,B
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Min Typ Max Unit Test Conditions
BVCBO BVCEO BVEBO ICBO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT Cob
-60 -50 -5 -1.0 -1.0 60 35 -0.2 -0.9 120 5 320 -0.6 -1.2
V V V μA μA
IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA,IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-400mA
Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
V V MHz pF
IC=-400mA, IB=-40mA IC=-400mA, IB=-40mA VCE=-10V, IC=-10mA VCB=-10V, f=1MHz
Output Capacitance
█ hFE Classification D
60—120
E
1200—200
F
160—320
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