HA42

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA42 █ HIGH VOLTAGE TRANSISTOR █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— St orage Te mp era t ure ……… …………… …… - 55~150 ℃ T j —— Junction Te mp erature ……………………… ………… 150 ℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………300V VCEO——Collector-Emitter Voltage……………………………300V V EB O —— Em i tte r - B a se Vo lt age … ……… …… ……… …… … 6V I C —— Collec t or Current ………… … ………… … ………… 500 m A 1―Emitter，E 2―Base，B 3―Collector， C TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Collector Cut-off Current Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO ICES HFE（1） HFE（2） HFE（3） VCE(sat1) VCE(sat2) VBE(sat1) 300 300 5 100 100 1 25 40 40 V V V nA nA μA IC=100μA, IE=0 IC=1mA, IB=0 IE=100μA，IC=0 VCB=200V, IE=0 VEB=3V, IC=0 VCE=300V, VBE=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product 50 0.5 1 0.9 V V V MHz IC=20mA, IB=2mA IC=60mA, IB=6mA IC=20mA, IB=2mA VCE=20V, IC=10mA F=100MHz fT