HA56

PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA56 █ APPLICATIONS General Purpose Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… - 55~150 ℃ T j —— Junction Temperature ………………………………… 150 ℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………-80V VCEO——Collector-Emitter Voltage……………………………-80V V EBO —— Emitter-Base Voltage ……………………………… -4V I C ——Collector Current…………………………………… -500mA TO-92 1―Emitter，E 2―Base，B 3―Collector， C █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO BVEBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage -80 -4 50 50 -0.25 -1.2 -100 -100 50 V V IC=-1mA, IB=0 IE=-100μA，IC=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA HFE（1） DC Current Gain HFE（2） DC Current Gain VCE(sat) ICBO ICEO fT Collector- Emitter Saturation Voltage Collector Cut-off Current Collector Cut-off Current Current Gain-Bandwidth Product VBE on） Base-Emitter On Voltage （ V V nA nA MHz IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCB=-80V, IE=0 VCE=-60V, IB=0 VCE=-1V,IC=-100mA, f=100MHz