HBD241C

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR HBD241C █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCER —— Collector-Emitter Voltage ……………………… 115V VCEO —— Collector-Emitter Voltage ……………………… 100V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current DC） （ ………………………………… 3A IC——Collector Current（Pulse）………………………………5A IB——Base Current……………………………………………1A TO-220 1―Base，B 2―Collector，C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Emitter Sustaining Voltage Min Typ Max Unit Test Conditions BVCEO(SUS) ICEO IEBO ICES HFE（1） HFE（2） VCE(sat) VBE(on) 100 300 1 200 25 10 1.2 1.8 V nA mA μA IC=30mA, IB=0 VCE=60V, IB=0 VEB=5V, IC=0 VCE=100V, VBE=0 VCE=4V, IC=1A VCE=4V, IC=3A Collector Cut-off Current Emitter-Base Cutoff Current Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter On Voltage V V IC=3A, IB=0.6A VCE=4V,IC=3A,