HBD435

Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R HBD435 █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCBO —— Collector-Base Voltage ………………………… 32V VCES —— Collector-Emitter Voltage ……………………… 32V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current DC） （ ………………………………… 4A IC——Collector Current（Pulse）………………………………7A （ ………………………………………1A IB——Base Current DC） TO-220 1―Base，B 2―Collector，C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter-Base Cutoff Current Collector Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICBO IEBO ICES HFE（1） *HFE（2） *HFE（3） *VCE(sat1) *VBE(on) fT 32 100 1 100 40 85 50 130 140 0.2 3 0.5 1.1 V μA mA μA IC=100mA, IB=0 VCB=32V, IE=0 VEB=5V, IC=0 VCE=32V, VBE=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter On Voltage Current Gain-Bandwidth Product V V MHz IC=2A, IB=0.2A VCE=1V,IC=2A, Ic=250mA, VCE=1V *Pulse Test: PW=300μS,Duty Cycle=1.5% Pulsed Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R HBD435