HBD436

Shantou Huashan Electronic Devices Co.,Ltd. P N P S I L I C O N T RAN S I S T O R HBD436 █ APPLICATIONS Medium Power Linear And Switching Applicatione. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 40W VCBO —— Collector-Base Voltage ………………………… -32V VCES —— Collector-Emitter Voltage ……………………… -32V VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current（DC）……………………………… -4A IC——Collector Current（Pulse）………………………………-7A IB——Base Current（DC）……………………………………-1A TO-220 1―Base，B 2―Collector，C 3―Emitter, E █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter-Base Cutoff Current Collector Cutoff Current Min Typ Max Unit Test Conditions BVCEO(SUS) ICBO IEBO ICES HFE（1） *HFE（2） *HFE（3） *VCE(sat1) *VBE(on) fT -32 -100 -1 -100 40 85 50 140 140 -0.2 3 -0.5 -1.1 V μA mA μA IC=-100mA, IB=0 VCB=-32V, IE=0 VEB=-5V, IC=0 VCE=-32V, VBE=0 VCE=-5V, IC=-10mA VCE=-1V, IC=-500mA VCE=-1V, IC=-2A DC Current Gain Collector- Emitter Saturation Voltage Base- Emitter On Voltage Current Gain-Bandwidth Product V V MHz IC=-2A, IB=-0.2A VCE=-1V,IC=-2A, Ic=-250mA, VCE=-1V *Pulse Test: PW=300μS,Duty Cycle=1.5% Pulsed Shantou Huashan Electronic Devices Co.,Ltd. P N P S I L I C O N T RAN S I S T O R HBD436