HBS170

Shantou Huashan Electronic Devices Co.,Ltd. HBS170 N-Channel Enhancement Mode Field Effect Transistor █ General Description These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. TO-92 1- D 2-G 3-S █ Features High density cell design for low Rds(on). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg —— S t orage Te m p e r ature --- -- -- --- -- -- -- -- -- - --- -- -- -- -- -- - --- -- -- -- -- -- - --- -- - 55~150 ℃ T j — — Oper ating Junction Te mp e r at ure -- -- -- -- -- -- -- -- -- -- -- -- - - - - - - - - - - - - - - - - - - - - -- - 55~150 ℃ V DSS — — D rain-S ource Vo ltage -- ------ ----- ---- ------ ----- ---- ------ ----- ---- ------ ----- 6 0 V VDGR —— Drain-Gate Voltage (RGS≤1MΩ) --------------------------------------------------------VGSS —— Gate-Source Voltage -----------------------------------------------------------------------ID —— Drain Current (Continuous) ---------------------------------------------------------------PD —— Maximum Power Dissipation -----------------------------------------------------------60V ±20V 500mA 0.83W █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol BVDSS IDSS IGSSF VGS(TH) RDS(ON) Items Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Body Leakage, Forward Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Time Turn - Off Time 320 24 17 7 Min. 60 0.5 10 0.8 3.0 5 40 30 10 10 10 Typ. Max. Unit V uA nA V Conditions VGS=0V, ID=100uA VDS =25V, VGS=0V VGS=15V , VDS =0V VDS = VGS , ID=1mA VGS=10V, ID=200mA VDS=10V, ID=200mA VDS = 10 V, VGS = 0 V, f = 1.0 MHz VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 Ω Ω mS pF pF pF nS nS gFS Ciss Coss Crss ton toff Shantou Huashan Electronic Devices Co.,Ltd. HBS170 █ Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. HBS170 █ Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. HBS170 █ Performance Curves