Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
█ APPLICATIONSL
High Voltage High-Speed Switching.
T O-220F
█ ABSOLUTE MAXIMUM RATINGS( Ta=25℃)
T stg ——Storage Temperature……………………………-55~150 ℃ T j ——Operating Junction Temperature …………………………150℃ PD —— Allowable Power Dissipation(T c=25℃)…………………38W VDSS —— Drain-Source Voltage ………………………………… 200V VDGR — — Drain-Gate Voltage (RGS=1M Ω) ……………………500V VGSS —— Gate-Source Voltage …………………………………± 0V 3 ID ——
1 1―G 2―D 3―S
*Drain Current Tc=25℃) ( …………………………………9.0A
* Drain current limited by maximumjunction temperature █ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit Test Conditions
BVDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time
Turn - Off Delay Time
200 2.0
0.34 7.05 550 85 22 11 70 60 65 22 3.6 10.2
10
V ID=250μA ,VGS=0V μA VDS =200V,VGS=0
±100 nA VGS=±30V , VDS = 0V 4.0 V VDS = VGS , ID =250μ A 0.4 720 110 29 30 150 130 140 29 ? S VGS=10V, ID =4.5A VDS = 40V , ID =4.5A * pF pF pF nS nS nS nS
nC nC nC
VDS =25V, VGS=0,f=1MHz VDD =100V, ID =9A RG= 25 Ω * VDS =0.8VDSS VGS=10V ID=9.0A * IS =9.0A , VGS=0
Fall Time
Total Gate Charge Gate– Source Charge Gate– Drain Charge
Continuous Source Current
9.0 1.5
A V
Diode Forward Voltage Thermal Resistance, Rth j-c) ( Junction-to-Case *Pulse Test:Pulse Width≤300μs,Duty Cycle ≤2%
3.33 ℃/W
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF630
很抱歉,暂时无法提供与“HFF630”相匹配的价格&库存,您可以联系我们找货
免费人工找货