HFP30N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 N-Channel Enhancement Mode Field Effect Transistor █　General Description　 This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This devices is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. T O-220 1- G 2-D 3-S █　Features 60V, RDS (on) ＜ 0.04? @VGS = 10 V •Low gate charge •100% avalanche tested •Improved dv/dt capability •Equivalent Type:FQP30N06 •30A, █ Maximum Ratings（Ta=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ） T s t g ——Storage Temperature ------------------------------------------------------ － 55~175 ℃ 　 　 　 　 T j —— Operating Junction Temperature -------------------------------------------------- 175 ℃　 VD S S — — D rain -Source Voltage ---------------------------------------------------------- 60V ID —— Drain Current (Continuous)(T c=25℃）----------------------------------------------------------- 30A Drain Current (Continuous)(Tc=100℃）--------------------------------------------------------- 21.2A IDM —— Drain Current Pulse ------------------------------------------------------------------------------ 120A VGSS —— Gate-Source Voltage -------------------------------------------------------------------------- ± 20V PD —— Maximum Power Dissipation (Tc=25℃）----------------------------------------------------- 79W EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, I D = IAR, VDD = 50 V) --------------------------------------------------- 430 mJ dv/dt—— Reak Diode Recovery dv/dt (ISD≤30A,di/dt≤300A/us,Vdd≤ BVdss,Duty Cycle ≤2%) ------------------------- 7.0V/ns 　 　 　 █ Thermal Characteristics　 Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max TO-220 1.9 62.5 0.5 Unit ℃/W ℃/W　 ℃/W　 　 Max Typ 　 　 　 Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Electrical Characteristics （Ta=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ） Symbol Items Min. 60 1 10 ± 100 2.0 4.0 0.04 1210 380 100 40 60 130 90 35 6.2 Typ. Max. Unit V µ A µ A nA V Conditions ID =250µ ,VGS=0V A VDS =60V, VGS=0V VDS =48V, VGS=0V,Tj=150℃ VGS= ± 20V , VDS =0V VDS = VGS , ID=250µ A VGS=10V, ID=15A Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate –Body Leakage On Characteristics Gate Threshold Voltage VGS(th) RDS(on) Static Drain-Source On-Resistance Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate– Source Charge Gate– Drain Charge ? pF pF pF nS nS nS nS nC nC nC VDS = 25 V, VGS = 0V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 30 V, ID = 15Apk RG = 50 ? (Note 1,2) VDS=0.8VDSS, ID=30A, VGS = 10 V (Note 1,2) 11.1 Drain-Source Diode Characteristics and Maximun Ratings Continuous Source– Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source– Drain Diode Forward VSD On– Voltage Notes: 1. Pulse Test: Pulse width≤300μＳ，Ｄｕｔｙ　ｃｙｃｌｅ≤２％ 2. Essentially independent of operating temperature 30 120 1.5 A A V IS=30A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Fig 11. Transient Thermal Response Curve Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig. 12. Gate Charge Test Circuit & Waveforms Fig 13. Switching Time Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Shantou Huashan Electronic Devices Co.,Ltd. HFP30N06 █ Typical Characteristics Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms