HFP4N60

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP4N60 █　 APPLICATIONSL High-Speed Switching. 　 T O-220 █ ABSOLUTE MAXIMUM RATINGS（ Ta=25℃） T stg ——Storage Temperature……………………………－55~150 ℃ T j ——Operating Junction Temperature …………………………150℃　 PD —— Allowable Power Dissipation T c=25℃） （ …………………100W VDSS —— Drain-Source V oltage ………………………………… 600V VGSS —— Gate-Source Voltage …………………………………± 0V 3 ID —— Drain Current T c=25℃） （ ……………………………………4.0A 1―G 2―D 3―S █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol　 Characteristics　 Min　 Typ　 Max　 Unit 　 Test Conditions 　 BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 600 　 　 2.0 　 　 　 　 ２．０　 ７１０　 65 14 20 55 70 55 22 4.8 8.5 　 　 　 １０　 V ID=250μA ,VGS=0V μＡ　 VDS =600V，VGS=0　 ±100　 ｎＡ　 VGS=±30V , VDS = 0V　 4.0 V VDS = VGS , ID =250μ A ２．５　 ９２０　 85 19 50 120 150 120 29 VGS=10V, ID =2.0A　 pF　 　 pF pF nS nS nS nS nC nC nC ?　 　　VDS =25V, VGS=0,f=1ＭＨｚ　 　　　 Fall Time Total Gate Charge Gate– Source Charge Gate– Drain Charge VDD =300V, ID =4.0A　 RG= 25 Ω*　 　 VDS =480V ＶＧＳ＝１０Ｖ ＩＤ＝４．０Ａ＊ IS =4.0A , VGS=0 Continuous Source Current 　 ４．０　 １．５　 Ａ　 Ｖ　 Diode Forward Voltage 　 Thermal Resistance， Rth j-c） （ 　 Junction-to-Case *Pulse Test：Pulse Width≤300μs，Duty Cycle ≤2% １．２５　 ℃／Ｗ　 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP4N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP4N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP4N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP4N60