HFP630

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 █　 APPLICATIONSL High Voltage High-Speed Switching. 　 T O-220 █ ABSOLUTE MAXIMUM RATINGS（ Ta=25℃） T stg ——Storage Temperature……………………………－55~150 ℃ T j ——Operating Junction Temperature …………………………150℃　 PD —— Allowable Power Dissipation（T c=25℃）…………………72W VDSS —— Drain-Source Voltage ………………………………… 200V VDGR — — Drain-Gate Voltage (RGS=1M Ω) ……………………500V VGSS —— Gate-Source Voltage …………………………………± 0V 3 ID —— 1―G 2―D 3―S *Drain Current Tc=25℃） （ …………………………………9.0A * Drain current limited by maximumjunction temperature █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol　 Characteristics 　 Min　 Typ　 Max　 Unit 　 Test Conditions 　 BVDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 200 　 　 2.0 　 　 　 　 　 ０．３４　 ７．０５　 ５５０　 85 22 11 70 60 65 22 3.6 10.2 　 　 １０　 V ID=250μA ,VGS=0V μＡ　 VDS =200V，VGS=0　 ±100　 ｎＡ　 VGS=±30V , VDS = 0V　 4.0 V VDS = VGS , ID =250μ A ０．４　 　 ７２０　 110 29 30 150 130 140 29 ?　 S VGS=10V, ID =4.5A　 VDS = 40V , ID =4.5A * pF　 　 pF pF nS nS nS nS nC nC nC 　　VDS =25V, VGS=0,f=1ＭＨｚ　 　　　 VDD =100V, ID =9A RG= 25 Ω *　 　 ＶＤＳ　＝０．８ＶＤＳＳ ＶＧＳ＝１０Ｖ ＩＤ＝９．０Ａ　＊ IS =9.0A , VGS=0 Fall Time Total Gate Charge Gate– Source Charge Gate– Drain Charge Continuous Source Current Diode Forward Voltage 　 　 ９．０　 １．５　 Ａ　 Ｖ　 *Pulse Test：Pulse Width≤300μs，Duty Cycle ≤2% Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP630