HFP740

Shantou Huashan Electronic Devices Co.,Ltd. HFP740 N-Channel Enhancement Mode Field Effect Transistor █ General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1- G 2-D 3-S █ Features • 10A, 400V, RDS(on)