HFP830

Shantou Huashan Electronic Devices Co.,Ltd. HFP830 N-Channel Enhancement Mode Field Effect Transistor █ General Description This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1- G 2-D 3-S █ Features • 4.5A, 500V, RDS(on) = 1.5Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF830 █ Maximum Ratings（Ta=25℃ unless otherwise specified） T stg —— Storage Temperature ------------------------------------------------------ - 55~150 ℃ T j — — Operating Junction Temperature ---------------------------------------------- - 55~150 ℃ V DSS — — D rain-Source Voltage ---------------------------------------------------------- 500V VDGR —— Drain-Gate Voltage (RGS=1MΩ) --------------------------------------------------------VGSS —— Gate-Source Voltage -----------------------------------------------------------------------ID —— Drain Current (Continuous) ------------------------------------------------------------------500V ±20V 4.5A PD —— Maximum Power Dissipation -------------------------------------------------------------- 75W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 4.5 A EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------270 mJ EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) --------------7.3mJ █ Thermal Characteristics Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 Max 1.71 Max 62.5 Typ 0.5 Unit ℃/W ℃/W ℃/W Shantou Huashan Electronic Devices Co.,Ltd. HFP830 Unit V Conditions ID=250µA ,VGS=0V VDS =500V, VGS=0V VDS=400V, VGS=0V,Tj=125℃ VGS= ±20V , VDS =0V VDS = VGS , ID=250µA VGS=10V, ID=2.5A VDS=40V, ID=2.5A █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbol Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 500 25 250 µA µA nA V Items Min. Typ. Max. IGSS Gate – Body Leakage On Characteristics VGS(TH) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance 2.0 ±100 4.0 1.5 Ω S Forward Transconductance 2.5 Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 22 12 10 gFS 800 200 60 30 30 55 30 pF pF pF nS nS nS nS nC nC nC VDS = 25 V, VGS = 0 V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 200 V, ID = 2.5Apk RG= 15 Ω VDS=0.8VDSS, ID=4.5A, VGS = 10 V Drain-Source Diode Characteristics and Maximun Ratings Continuous Source–Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source–Drain Diode Forward VSD On–Voltage 4.5 18 1.5 A A V IS=4.5A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified） Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified） Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified） Shantou Huashan Electronic Devices Co.,Ltd. HFP830 █ Typical Characteristics（Ta=25℃ unless otherwise specified）