HFR1N60

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 █　 APPLICATIONSL high-Speed Switching. 　 T O-92 █ ABSOLUTE MAXIMUM RATINGS（ Ta=25℃） T stg ——Storage Temperature……………………………－55~150 ℃ T j ——Operating Junction Temperature …………………………150℃　 PD —— Allowable Power Dissipation（T c=25℃）…………………1W VDSS —— Drain-Source Voltage ………………………………… 600V VGSS —— Gate-Source Voltage …………………………………± 0V 3 ID —— Drain Current T c=25℃） （ ……………………………………0.4A IDM —— Drain Current Pulsed） （ ……………………………………1.6A 1―G 2―D 3―S █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol　 Characteristics　 Min　 Typ　 Max　 Unit 　 Test Conditions 　 BVDSS IDSS IGSS VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 600 　 　 2.0 　 　 　 　 　 ９．３　 ０．７５　 １３０　 19 3.5 7 21 13 27 4.8 0.7 2.7 　 　 　 ５０　 ±100　 4.0 １１．５　 　 １７０　 25 6 24 52 36 64 6.2 V ID=250μA ,VGS=0V μＡ　 VDS =600V，VGS=0　 ｎＡ　 VGS=±30V , VDS = 0V　 V VDS = VGS , ID =250μ A ?　 S VGS=10V, ID =0.2A　 VDS = 40V , ID =0.3A* pF　 　 pF pF nS nS nS nS nC nC nC 　　VDS =25V, VGS=0,f=1ＭＨｚ　 　　　 Fall Time Total Gate Charge Gate– Source Charge Gate– Drain Charge VDD =300V,ID =1.1A 　 RG= 25 Ω *　 　 VDS =480V，ＩＤ＝１．１Ａ ＶＧＳ＝１０Ｖ　　＊ IS =0.4A , VGS=0 Continuous Source Current 　 ０．３　 １．４　 １４０　 Ａ　 Ｖ　 ℃／Ｗ　 Diode Forward Voltage 　 Thermal Resistance， Rth j-A） （ 　 Junction-to-Ambient *Pulse Test：Pulse Width≤300μs，Duty Cycle ≤2% Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFR1N60